Mean Inner Potentials in Oxidized Germanium Nanowires by Electron Holography

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Quantifying mean inner potential of ZnO nanowires by off-axis electron holography.

Off-axis electron holography has been used to quantitatively determine the mean inner potential of ZnO. [0001] grown ZnO nanowires with hexagonal cross-sections were chosen as our samples because the angle between the adjacent surfaces is 120°, as confirmed by electron tomography, so the entire geometry of the nanowire could be precisely determined. The acceleration voltage of the transmission ...

متن کامل

Determination of mean inner potential of germanium using off-axis electron holography.

Off-axis electron holography has been used to determine the mean inner potential of germanium using cleaved 90 degrees wedge samples, where the wedge thickness profiles were checked by weak-beam dark-field extinction fringes. Dynamical contributions to the phase of the image were minimized by tilting to weakly diffracting conditions, as confirmed by reference to convergent-beam electron diffrac...

متن کامل

The measurement of electrostatic potentials in core/shell GaN nanowires using off-axis electron holography

Core-shell GaN nanowires are expected to be building blocks of future light emitting devices. Here we apply off-axis electron holography to map the electrostatic potential distributions in such nanowires. To access the cross-section of selected individual nanowires, focused ion beam (FIB) milling is used. Furthermore, to assess the influence of FIB damage, the dopant potential measured from an ...

متن کامل

Gold catalytic Growth of Germanium Nanowires by chemical vapour deposition method

Germanium nanowires (GeNWs) were synthesized using chemical vapor deposition (CVD) based on vapor–liquid–solid (VLS) mechanism with Au nanoparticles as catalyst and germanium tetrachloride (GeCl4) as a precursor of germanium. Au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in Au colloidal s...

متن کامل

Deformation potentials and electron-phonon coupling in silicon nanowires.

The role of reduced dimensionality and of the surface on electron-phonon (e-ph) coupling in silicon nanowires is determined from first principles. Surface termination and chemistry is found to have a relatively small influence, whereas reduced dimensionality fundamentally alters the behavior of deformation potentials. As a consequence, electron coupling to "breathing modes" emerges that cannot ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Microscopy and Microanalysis

سال: 2005

ISSN: 1431-9276,1435-8115

DOI: 10.1017/s1431927605504471